PART |
Description |
Maker |
K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0 |
From old datasheet system EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC 32M x 8 Bit NAND Flash Memory
|
Samsung Electronics Inc SAMSUNG[Samsung semiconductor]
|
K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 |
TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误 512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
|
http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
CY7C68034-56LFXC CY7C68033-56LFXC |
EZ-USB NX2LP-Flex Flexible USB NAND Flash Controller EZ-USB NX2LP-FlexFlexible USB NAND Flash Controller
|
Cypress Semiconductor Corp.
|
NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位1千兆位(x8/x1628 Byte/264字的页面1.8V/3V,NAND闪存芯片 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 64M X 8 FLASH 3V PROM, 35 ns, PBGA55 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 128M X 8 FLASH 3V PROM, 35 ns, PDSO48 8M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics 意法半导 STMicroelectronics N.V. NUMONYX http://
|
LPC3200 LPC3220FET296 LPC3240FET296 |
16/32-bit ARM microcontrollers ARM926EJ-S with 128 kB SRAM, USB High-speed OTG, SD/MMC, NAND flash controller ARM926EJ-S with 256 kB SRAM, USB High-speed OTG, SD/MMC, NAND flash controller, Ethernet
|
NXP Semiconductors N.V.
|
TC58DVG02A1FTI |
Flash - NAND
|
TOSHIBA
|
TC58DVM82A1XBJ1 |
Flash - NAND
|
TOSHIBA
|
TC58DVM72A1FTI |
Flash - NAND
|
TOSHIBA
|
MT29F16G08CBACA MT29F16G08CBACB |
NAND Flash Memory
|
Micron
|
|